| PART |
Description |
Maker |
| PHMB1200B121 |
1200A 1200V
|
Nihon Inter Electronics Corporation
|
| ISL9R8120S3S ISL9R8120P2 ISL9R8120S3ST ISL9R8120P2 |
8A, 1200V STEALTH DIODE, TO220AC PACKAGE
8A, 1200V STEALTH DIODE, TO263/D2PAK PACKAGE
8A, 1200V StealthDiode 8 A, 1200 V, SILICON, RECTIFIER DIODE, TO-263AB
8A/ 1200V Stealth Diode
8A, 1200V Stealth⑩ Diode
8A, 1200V Stealth?/a> Diode
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| ISL9K8120P3 |
8A, 1200V StealthDual Diode 8 A, 1200 V, SILICON, RECTIFIER DIODE, TO-220AB
8A, 1200V Stealth Dual Diode
8A, 1200V Stealth⑩ Dual Diode
8A, 1200V Stealth?/a> Dual Diode
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| 6MBP75RJ120 |
IGBT IPM R-series 1200V class 1200V / 75A 6 in one-package
|
Fuji Electric
ETC
List of Unclassifed Manufacturers
|
| RURG30120 FN3399 |
30A, 1200V Ultrafast Diode(30A, 1200V 超快速二极管) 30 A, 1200 V, SILICON, RECTIFIER DIODE, TO-247
30A/ 1200V Ultrafast Diode
From old datasheet system
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| HGT1S11N12 HGTG11N120CN HGT1S11N120CNS HGTP11N120C |
From old datasheet system
43A 1200V NPT Series N-Channel IGBT
43A/ 1200V/ NPT Series N-Channel IGBT
43A, 1200V, NPT Series N-Channel IGBT(43A, 1200V NPT系列N沟道绝缘栅双极型晶体 43 A, 1200 V, N-CHANNEL IGBT, TO-263AB
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| ISL9R18120S3S ISL9R18120G2 ISL9R18120P2 ISL9R18120 |
18A, 1200V STEALTH DIODE, TO263/D2PAK PACKAGE
18A, 1200V Stealth⑩ Diode
|
FAIRCHILD[Fairchild Semiconductor]
|
| HGT1S11N120CNS HGTP11N120CN HGTG11N120CN HGT1S11N1 |
43A, 1200V, NPT Series N-Channel IGBT 43 A, 1200 V, N-CHANNEL IGBT, TO-263AB
Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 3300uF; Voltage: 25V; Case Size: 16x25 mm; Packaging: Bulk 43 A, 1200 V, N-CHANNEL IGBT, TO-220AB
43A/ 1200V/ NPT Series N-Channel IGBT
43A 1200V NPT Series N-Channel IGBT
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| 3MBI150U-120 |
IGBT Module U-Series 1200V / 150A 3 in one-package
1200V / 150A 3 in one-package 200 A, 1200 V, N-CHANNEL IGBT
|
List of Unclassifed Manufacturers
ETC
Electronic Theatre Controls, Inc.
Fuji Electric Holdings Co., Ltd.
|
| IRG4PH50S |
1200V DC-1 kHz (Standard) Discrete IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=1.47V, @Vge=15V, Ic=33A)
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V Vce(on)typ.=1.47V @Vge=15V Ic=33A)
|
IRF[International Rectifier]
|
| HGTP5N120 HGT1S5N120 HGT1S5N120BNDS FN4597 HGTP5N1 |
From old datasheet system
21A 1200V NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes
21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes(21A, 1200V,NPT系列N沟道绝缘栅双极型晶体
21A/ 1200V/ NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes
21 A, 1200 V, N-CHANNEL IGBT, TO-263AB
|
INTERSIL[Intersil Corporation]
|
| X4005S8 X4005S8-1.8 X4005S8-2.7 X4005S8-2.7A X4005 |
RTC Module With CPU Supervisor 时钟模块CPU监控
DIODE, STUD 95A 400VDIODE, STUD 95A 400V; Voltage, Vrrm:400V; Current, If av:95A; Current, Ifs max:1150A; Voltage, forward at If:1.5V; Case style:E12; Thread size:M8; Diode type:Standard recovery; Polarity, diode:Stud Cathode
MODULE DROP IN FOR XE1203 868MHZ
Standard Recovery Rectifier; Repetitive Reverse Voltage Max, Vrrm:1600V; Forward Current Avg Rectified, IF(AV):70A; Non Repetitive Forward Surge Current Max, Ifsm:1150A; Forward Voltage Max, VF:1.5V; Package/Case:DO-203AB
THYRISTOR, CAPSULE, 550A; Thyristor/Triac type:Thyristor; Voltage, Vdrm:1200V; Current, It rms:1200A; Current, Itsm:9000A; Current, Igt:250mA; Voltage, Vgt:1.65V; Case style:TO-200; Current, It av:550A; Diameter, External:41mm; RoHS Compliant: Yes
|
Intersil, Corp.
XICOR[Xicor Inc.]
|
|
